Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.054
Publication date: 6th July 2018
We report on the carrier transport properties of CVD-grown CuWO4 films for solar water splitting with varying copper-to-tungsten stoichiometry within the borders of the binary metal oxides CuO and WO3. Time-resolved terahertz (TRTC) and microwave conductivity (TRMC) measurements addresses the bulk dynamics in different time windows from sub-ps to ms. In addition, photo-induced absorption (PIA) in a photo-electrochemical cell is applied to study the temporal behavior of excited carriers in the vicinity of the semiconductor/electrolyte interface under varying bias. A charge carrier mobility of ∼6× 10−3 cm2 V−1 s−1 and a diffusion length of and 30 nm is determined for a CuWO4 absorber film deposited with a copper-to-tungsten ratio (Cu/W) of 1.1 which also provides the best photocurrents in assembled photo-electrochemical cells. This value is comparable to undoped BiVO4 where poor carrier transport is governed by small polaron formation leading to slow mobility values. We compare the experimental results with measurements performed on dip-coated CuWO4 samples and other metal oxides such as BiVO4 and Cu2O. Our findings establish new insights into the advantages and limits of CuWO4-based photoanodes that can be possibly used in a tandem configuration on top of a highly absorbing semiconductor with optimal electronic properties.
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