Highly Efficient PbS Colloidal Quantum Dot Based Infrared Light Emitting Diodes through Suprananocrystalline Matrix Engineering
Santanu Pradhan a, Francesco DiStasio a, Yu Bi a, Shuchi Gupta a, Sotirios Christodoulou a, Alexandros Stavrinadis a, Gerasimos Konstantatos a b
a ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Avinguda Carl Friedrich Gauss, 3, Castelldefels, Spain
b Institució Catalana de Recerca i Estudis Avançats (ICREA), Spain, Passeig Lluis Companys 23, Barcelona, Spain
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting 2018 (NFM18)
S4 Nanophotonics by Nanocrystals
Torremolinos, Spain, 2018 October 22nd - 26th
Organizers: Daniel Vanmaekelbergh and Zeger Hens
Oral, Santanu Pradhan, presentation 052
DOI: https://doi.org/10.29363/nanoge.nfm.2018.052
Publication date: 6th July 2018

The rapid growth of colloidal quantum dot (CQD) opto-electronics establishes it as one of the most promising new generation technology related to photo-detection, photovoltaic (PV) and light emitting diodes (LEDs) [1]. Although CQD based LEDs enjoy tremendous success in the visible range [2], not so can be claimed about their infrared counterpart, which has a number of applications, including night vision, remote sensing, spectroscopy and biological imaging. The main reason for the poor performance in the infrared is the low photoluminescence quantum yield (PLQY) of ligand exchanged CQD solids. Several techniques like synthesis of core-shell structures [3], chemical passivation with perovskite matrix [4] etc. improve the efficiency but still they are far from their potential. We report here a passivation technique based on suprananocrystalline matrix engineering which leads to record external quantum efficiency (EQE).

Mixed ligand treatment on short-wave infrared (SWIR) based PbS quantum dot solar cell leads to record high PV performance [5]. Yet, the ligand treated SWIR QD solids showed a mere 2% PLQY due to a large amount of non-radiative recombination. The matrix presented here, passivates the non-radiative recombination channels and improve the PLQY over 60%. Careful optimization of the matrix and device architecture leads to record peak EQE of ~7.9% and peak power conversion efficiency of ~9.3% with emission at 1400 nm. Furthermore, PV devices based on this passivation technique showed record high open circuit voltage (0.69 V corresponding to 0.92 eV QD bandgap) confirming the effectiveness of the passivation.

References:

[1] Kagan, C. R., Lifshitz, E., Sargent, E. H., & Talapin, D. V. Buliding devices from colloidal quantum dots. Science 353, aac5523 (2016).

[2] Shirasaki, Y., Supran, G. J., Bawendi, M. G. & Bulović, V. Emergence of colloidal quantum-dot light-emitting technologies. Nat. Photonics 7, 13–23 (2013).

[3] Supran, G. J. et al. High-performance shortwave-infrared light-emitting devices using core–shell (PbS–CdS) colloidal quantum dots. Adv. Mater. 27, 1437–1442 (2015).

[4] Gong, X. et al. Highly efficient quantum dot near-infrared light-emitting diodes. Nat. Photonics 10, 253–257 (2016).

[5] Bi, Y. et al. Infrared solution‐processed quantum dot solar cells reaching external quantum efficiency of 80% at 1.35 µm and JSC in excess of 34 mA cm-2. Adv. Mater. 30, 1704928 (2018).

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