Proceedings of nanoGe Fall Meeting 2018 (NFM18)
DOI: https://doi.org/10.29363/nanoge.nfm.2018.012
Publication date: 6th July 2018
In the present talk we discuss the opportunities and challenges for Kesterite based high band gap absorber layers to act as functional layers in tandem or semi transparent thin film solar cells. Materials based on the kesterite crystal structure have already shown their good properties as thin film solar cell absorbers. Depending on the elements in the crystal, a high band gap value can be achieved, which could present an opportunity for these type of materials to be used as a top cell in tandem devices or as an active layer in a semi-transparent thin film solar cell. After a general introduction we present the properties of Cu2ZnGe(S,Se)4 based solar cell devices, which have a band gap in the 1.4 to 2 eV range depending on the S content in the layer. The crystallization process is analyzed and the solar cell properties of such devices are presented in detail. Solar cell conversion efficiencies in excess of 8 % could be achieved with this material system but some challenges remain. We will compare these results to other high band gap chalcogenide thin film absorber materials.
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