Fabrication of honeycomb semiconductors using electron beam lithography
Christiaan Post a
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2017 (NFM17)
SE2: Opto-electronics of 2-D Nanostructured Semiconductors: Parabolic vs. Linear Dirac Bands
Barcelona, Spain, 2017 September 4th - 9th
Organizers: Daniel Vanmaekelbergh and Cherie Kagan
Oral, Christiaan Post, presentation 119
Publication date: 20th June 2016

Graphene is a two-dimensional flat material which exhibits fascinating physical properties due to its honeycomb lattice structure. Calculations [1] and experiments [2] have shown that charge carriers have a linear energy dispersion (Dirac cones) near the corners of the Brillouin zone, indicating that they behave like massless particles. These fundamental properties result in interesting optical and electrical characteristics in this material.

My research will focus on the fabrication and characterization of artificial graphene by nano pattering inside a high mobility two-dimensional electron gas confined in an InGaAs/InAlAs quantum well. Electron beam lithography is used to create a mask with a honeycomb structure, which will be used to etch inside the surface of the sample. Main goal of my project aims at revealing Dirac cones in the band structure of the electrons by performing low-temperature transport measurements, optical measurements and local-probe spectroscopy in a scanning tunneling microscopy setup.

I would like to present the first results of this research, which consist of the fabrication of honeycomb semiconductors using electron beam lithography. 

This research is performed in collaboration with the institute d’electronique, de microelectronique et de nanotechnologie (IEMN) at Lille, France.

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