Proceedings of nanoGe September Meeting 2017 (NFM17)
Publication date: 20th June 2016
Following the demonstration that single layers of graphite have interesting properties, the layered structure transition metal dichalcogenides have also become the subject of intensive research. The term “van der Waals epitaxy” was coined in early publications where thin layers of 2D materials were deposited on other 2D materials. We have used molecular beam epitaxy to grow a variety of 2D materials, such as MoSe2 and WSe2 on other 2D materials such as MoS2 and SnS2. Scanning tunneling microscopy (STM) was used to image the Moiré patterns generated by the lattice mismatch between the layers. Recent work has reinterpreted the nature of these STM images and this will be discussed. Both atomic force microscopy (AFM) and STM can pattern the materials by etching them away a layer at a time only in the areas scanned. The rate of etching with the AFM was proportional to the applied force when operating in contact mode. A single layer nanostructured diode and transistor structures were demonstrated by selectively patterning through multiple layers.
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