Transport through ionic liquid gated 2D materials
Alberto Morpurgo a
a University of Genève, CH
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2017 (NFM17)
SE2: Opto-electronics of 2-D Nanostructured Semiconductors: Parabolic vs. Linear Dirac Bands
Barcelona, Spain, 2017 September 4th - 9th
Organizers: Daniel Vanmaekelbergh and Cherie Kagan
Invited Speaker, Alberto Morpurgo, presentation 031
Publication date: 20th June 2016

Ionic liquid gating has proven to be a powerful techniques to accumulate very large density of charge carriers at surfaces of many different materials, reaching levels well in excess of 1014 cm-2. In this talk I will give an overview of our work on ionic liquid gating of semiconducting transition metal dichalcogenides, focusing on different aspects characteristic of both semiconductor physics and superconductivity. In the first part of the talk I will show the possibility to achieve high-quality ambipolar transport, to use ambipolar ionic liquid gated transistors to measure the semiconducting band-gap, and to realize light-emitting transistors. Most of the experiment concenrs individual materials, but we also recently achived ionic liquid gating of van der Waals heterstructures, which offer the potential to probe new phenomena. In the second part of the talk I will present our work on gate induced superconductivity, and show a number of interesting resulty, including the fact that gate-induced superconductivity in MoS2 persists down to the level of individual monolayers. 

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