Proceedings of nanoGe September Meeting 2017 (NFM17)
Publication date: 20th June 2016
Two-dimensional (2D) semiconducting materials of layered metal chalcogenides have been extensively explored during the last decade to complement graphene for ultra-thin and flexible electronic applications.1,2 In this work3, we report a low-temperature wet-chemical synthesis of β-In2Se3 nanosheets with monolayer thickness and tunable lateral sizes from ~300 nm to ~900 nm, using short aminonitriles (dicyandiamide or cyanamide) as shape controlling agents. The phase and the monolayer nature of the nanosheets were ascertained by analysing the intensity ratio between two diffraction peaks from two-dimensional slabs of the various phases, determined by diffraction simulations. These findings were further backed-up by comparing and fitting the experimental X-ray diffraction pattern with Debye Formula simulated patterns and with side-view high-resolution transmission electron microscopy imaging and simulation. The β-In2Se3 nanosheets were found to be indirect band-gap semiconductors (Eg=1.55 eV) and single nanosheet photodetectors demonstrated photo-responsivities up to 104 A/W in the visible range (with light powers in the fW range) and response times of 2-3 ms. These values are orders of magnitude better than most photoconductors based on 2D transition metal dichalcogenides and compete with the best devices based on other 2D III-VI materials.4
References
1. Wang, Q. H. et al. Nat. Nanotechnol. 7 (2012) 699–712
2. Yuan, H. et al. Acc. Chem. Res. 48 (2015) 81–90
3. Almeida et al.J. Am. Chem. Soc. 139 (8) (2017) 3005–3011
4. Buscema, M. et al. Chem Soc Rev 44 (2015) 3691–3718
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