Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
In semiconductors, absorption of photons with energy exceeding the band gap leads to formation of hot electrons and holes that usually cool down to the band edge by emission of phonons. In semiconductor nanocrystals sufficiently energetic electrons and holes may also relax by exciting additional electrons across the bandgap via carrier multiplication.Recently, percolative networks of PbSe were prepared by oriented attachment of quantum dots via atomic bonding. We have investigated the efficiency of photogeneration of charges via carrier multiplication, as well as their mobility and decay due to recombination or trapping, using ultrafast optical pump and THz probe spectroscopy. The charge carrier mobility increases from 150 cm2/Vs at 0.2 THz to 260 cm2/Vs at 0.6 THz. In addition, carrier multiplication follows a step-like dependence on photon energy with threshold near twice the band gap. The carrier multiplication efficiency in the percolative networks is much higher than for arrays of PbSe quantum dots connected by short organic ligands. The high charge carrier mobility and efficient step-like carrier multiplication makes the PbSe percolative networks of great promise for photovoltaic applications.
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