Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
Protective overlayers for light absorbers in photoelectrochemical (PEC) water splitting cells have gained more and more attention in recent years.1-5 They can stabilize absorber materials which would normally be prone to chemical side reaction in PEC devices. The Atomic Layer Deposition (ALD) process enables the conformal and reproducible ultrathin protective layer growth even on highly structured substrates.
Knowledge of the properties of such protective layers is crucial for the understanding of their performance. We have investigated ALD TiO2 layers deposited from TDMAT at different temperatures (120°, 150° and 300°C) and investigated their chemical composition as well as the optical and electrochemical properties. XPS, UV-VIS absorption, current–voltage curves and impedance spectroscopy data are discussed for ALD film thicknesses ranging from 1–60nm. The blocking abilities towards the ferrocyanid redox couple show that at least 15-30 nm of protective layer should be deposited in routine laboratory work for always achieving pin hole free layers.
1) Paracchino, A.; Laporte, V.; Sivula, K.; Grätzel, M.; Thimsen, E. Nature Materials 2011, 10, 456.
2) Tilley, S. D.; Schreier, M.; Azevedo, J.; Stek, M.; Grätzel, M. Adv. Funct. Mater. 2014, 24, 303.
3) Hu, S.; Shaner, M. R.; Beardslee, J. A.; Lichterman, M.; Brunschwig, B. S.; Lewis, N. S. Science 2014, 344, 1005.
4) Mei, B.; Pedersen, T.; Malacrida, P.; Bae, D.; Frydendal, R.; Hansen, O.; Vesborg, P. C. K.; Seger, B.; Chorkendorff, I. J. Phys. Chem. C 2015, 119 , 15019.
5) Kavan, L.; Tétreault, N.; Moehl, T.; Grätzel, M. J. Phys. Chem. C 2014, 118, 16408.
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