ZnO/CdTe structures for 3rd generation solar cells: strong confinement effect in CdTe nanocrystals.

Lidice Vaillant Roca,^a, S. Larramendi Valdés^b, M. Behar^c, P. Saint-Gregoire ^d

^aUniversity of Havana, Zapata esq G s/n, Plaza , La Habana, 10400, Cuba

^bPhysics Faculty IMRE, University of Havana, San Lazaro y L, Plaza, La Habana 10400, Cuba

^cIon Implantation Laboratory, Institute of Physics, Federal University of Rio Grande do Sul., CP 15051, CEP 91501-970, Porto Alegre, RS, Brazil.

^dMIPA, Dept Sciences and Arts, University of Nîmes, CS 13019, 30021 Nîmes cedex 01,, France

Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)

Berlin, Germany, 2016 September 5th - 13th

Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon

Poster, Lidice Vaillant Roca,, 154
Publication date: 14th June 2016

Third Generation Solar Cells involves a wide range of devices in which nano size has a great impact. The generality of these devices arquitectures take advantages of the huge interfacial area enhacement. Nevertheless, the main potential has been adressed in the exploitation of the nanoparticles multiexcitation effects that allows the production of more than one carrier pair per absorbed photon. In this sense, the most produced and studied semiconductor nanocrystals has been obtained in collodial form. Yet, the trasspasing of collodial nanocrystals into an effective solar cell has not been clear. In this work we approaches the application of CdTe nanocrystals showing strong quantum confinement effect, obtained by means of the close space isothermal sublimation technique over ZnO nanorods. The n type ZnO as a nanorods scaffold is obtained by the hydrothermal technique, that was later on infiltrated with the p-type absorber CdTe. Zinc oxide has extensively proved its functionality and versatility in electronic and optoelectronic applications. In particular, this materials has been used use in novel photovoltaic devices. At the same time, CdTe is considered a very good material for the absorption of sun light, given its high absorption coefficient and optimum band gap. With the formation of this structure, we are taking insight into a stable completely inorganic structure, obtained with simple processes and acceptable reproducibility. Furthermore, the junction formation is analyze using scanning electron microscopy (SEM), Rutherford Back Scattering Spectroscopy (RBS), X-Ray Diffraction (XRD), High Resolution Electron Transmission Microscopy (HRTEM), and Absorbance and Photoluminiscence (PL) techniques.

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