Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
Thermalization of photo-excited carriers with energy in excess of the band gap limits power conversion efficiency, requiring semiconductor absorbers with longer visible-wavelength band gaps close to the peak in the solar spectrum where the Shockley-Queisser efficiency is highest, and with relatively high carrier lifetime-mobility product. Ferroelectric absorbers which promote carrier separation and can exhibit above-gap photovoltages are attractive candidates for photovoltaic solar energy conversion. Cation substitution chemistries promoting cation-vacancy pairs are effective for gap reduction without loss of ferroelectricity, enabling a completely new family of visible light-absorbing ferroelectric solid-solution semiconductors. I will review our recent progress in preparing and characterizing the atomic and electronic structure, and the optical, electronic, optoelectronic and photovoltaic properties of new semiconducting ferroelectric oxide films. I will discuss our recent findings advancing understanding of the bulk photovoltaic effect (BPVE) in ferroelectrics, including how the BPVE may be used to enhance carrier separation and enable unexpectedly high conversion efficiencies. Work at Drexel supported by the US Army Research Office under W911NF-14-1-0500 and also by the National Science Foundation under DMR 1124696.
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