Carrier mobility in 1D and 2D colloidal semiconductor nanocrystals
Alexander Achtstein a, Laurens Siebbeles a, Wiel Evers a, Prashant Bhaskar a, Martien Vermeulen a, Relinde Moes b, Daniel Vanmaekelbergh b, Mikhail Artemyev c
a Delft University of Technology, The Netherlands, Julianalaan, 136, Delft, Netherlands
b Institue for Physico-Chemical Problems, Belorussian State University, Minsk
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Poster, Prashant Bhaskar, 151
Publication date: 14th June 2016

Colloidal semiconductor nanocrystals (NCs) are known to play an essential role in the burgeoning next generation optoelectronic devices such as solar cells, photodiodes, light-emitting diodes (LEDs) and field-effect transistors (FETs). We investigate the charge carrier mobility and their recombination dynamics in 1D and 2D semiconductor NCs. The varying anisotropic carrier confinement, effective mass and defect density result in strong tuneability of the carrier mobility and their recombination lifetime. In this study we measure the intraparticle charge carrier mobility and their recombination dynamics in colloidal semiconductor NCs. The electron−hole pairs are generated by using high energy (3 MeV) pulsed electron irradiation that results into a uniform distribution of charge carriers inside the sample. The irradiation induced charge carrier mobility and recombination dynamics are studied using electrode-less time-resolved microwave conductivity technique. The influence of composition, size and anisotropic confinement is investigated. The presented results can be used to improve the performance of nanocrystal based optoelectronic devices.



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