Dopants and Charge Carriers in Colloidal Semiconductor Nanocrystals
Daniel R Gamelin a
a University of Washington, US, Seattle, United States
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Invited Speaker, Daniel R Gamelin, presentation 149
Publication date: 14th June 2016

The physical properties of inorganic crystalline materials can be dramatically transformed by controlled introduction of impurities or other defects, without which most semiconductor technologies including transistors, diodes, and solar cells would not be possible. The development of methods for growing high-quality doped inorganic crystals has consequently been a perennial research frontier. This talk will describe some of our group's recent research into the development of doped semiconductor nanocrystals as new forms of matter at this research frontier. New chemistries for introducing open-shell transition-metal impurity ions or excess free charge carriers into colloidal II-VI semiconductor nanocrystals will be described, and the unique physical properties of these doped nanocrystals will be discussed.  



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