Charge carrier dynamics in colloidal ultrathin 2D Cu2-xS nanosheets
Ward van der Stam a, Celso de Mello Donega a, Anne Berends a, Mischa Bonn b, Dmitry Turchinovich b, Ivan Ivanov b
a Max Planck Institute for Polymer Research, Mainz, Ackermannweg, 10, Mainz, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Oral, Ward van der Stam, presentation 315
Publication date: 14th June 2016

Ultrathin 2D nanomaterials (nanosheets, NSs) have attracted intense research efforts due to their extraordinary optoelectronic properties.[1,2] To date, colloidal NSs of a variety of compositions have been prepared. We have developed 2 nm thin colloidal Cu2-xS NSs with tunable lateral dimensions (100 nm to 3 µm) and well defined size (hexagonal or triangular).[3] Cu2-xS is a direct p-type semiconductor and its bandgap (1.1 – 2.0 eV) and the excess hole density depend on the concentration of Cu vacancies (indicated by x), which make Cu2-xS a versatile material for efficiently tuning the dopant concentration.            

Here, we study the charge carrier dynamics in ultrathin Cu2-xS NSs with Terahertz (THz) spectroscopy. Ultrafast spectroscopy techniques are particularly relevant to study optoelectronic properties in detail.[4] For example, the mobilities of free charge carriers can be probed, or exciton relaxation rates can be investigated. We study the dynamics of the intrinsic charge carriers (i.e., without optical pumping) and of the photogenerated charge carriers (i.e., with optical pumping) using a THz probe pulse. Furthermore, we show that the mobility of the excess carriers (holes) depends on the lateral dimensions of the NSs (ranging from 80 mS for the smallest NSs to 200 mS for the largest NSs). We find that the mobility increases upon photoexcitation, due to the creation of free electrons and holes. Finally, we show that the charge carrier dynamics can be best described with the Drude-Smith model for backscattering charges.    

[1] Ithurria, S.; Tessier, M. D.; Mahler, B.; Lobo, R. P. S. M.; Dubertret, B.; Efros, Al. L. Nat. Mater. 2011, 10, 936–941.
[2] Schliehe, C.; Juarez, B. H.; Pelletier, M.; Jander, S.; Greshnykh, D.; Nagel, M.; Meyer, A.; Foerster, S.; Kornowski, A.; Klinke, C.; et al. Science 2010, 329, 550–553.
[3] van der Stam, W.; Akkerman, Q. A.; Ke, X.; van Huis, M. A.; Bals, S.; Donega, C. d. M. Chem. Mater. 2015, 27, 283−291.
[4] Aerts, M; Bielewicz, T.; Klinke, C.; Grozema, F. C.; Houtepen, A. J.; Schins, J. M.; Siebbeles, L. D. A. Nat. Commun. 2014, 5, 3789−3794.



© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info