Dipolar and resistive switching in an organic supramolecular semiconductor α-CBT
Indre Urbanaviciute a, Martijn Kemerink a, Andrey Gorbunov b, Egbert W. Meijer c, R. Helen Zha c, Andreas Haedler c, Michael Wübbenhorst d, Tristan Putzeys d, Hans-Werner Schmidt e, Milan Kivala f
a Linköping University, Sweden, SE-581 83, Linköping, Sweden
b Eindhoven University of Technology, Department of Applied Physics, 5600MB, Eindhoven, Netherlands
c Institute for Complex Molecular Systems, Eindhoven University of Technology, NL, Den Dolech 2, 5600 MB, Eindhoven, NL, Netherlands
d Department of Physics and Astronomy, Laboratory for Soft Matter and Biophysics, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee
e Makromolekuläre Chemie I, Bayreuther Institut für Makromolekülforschung (BIMF), and Bayreuther Zentrum für Kolloide und Grenzflächen (BZKG), Universität Bayreuth, 95440 Bayreuth
f Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Erlangen, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Oral, Indre Urbanaviciute, presentation 509
Publication date: 14th June 2016

Information storage in flexible electronics remains a technological challenge. Organic memory devices yet promise re-writability, non-volatility, non-destructive electrical readout and scalability. Here, we demonstrate hysteretic resistive switching in a simple organic memory diode utilizing a multifunctional – semiconducting and dipolar – single organic molecule, a-CBT. In thin films a-CBT organizes into a hexagonal columnar packing, facilitating both effective charge transport and collective dipolar behavior.

It was found by depth-resolved pyroelectric response measurements (LIMM) that the bulk of the material remains unpoled: the conductivity switching is caused only by the field-driven dipole re-orientation in the interfacial areas near the metal electrodes, from where significant LIMM signal was observed. The presence of an interfacial polarization field leads to a modulation of the barrier for charge injection into the semiconductor by around 0.5 eV. Consequently, for devices with electrodes chosen wisely the current jumps from a low, injection-limited, off-state to a high, space charge-limited, on-state after passing the coercive field of approximately 13 V/µm. The resulting memory diodes show switchable rectification with high on/off ratios of up to two orders of magnitude, which is desirable for application in crossbar arrays.

Combining dipolar and semiconducting properties into a single compound solves many of the problems associated with previously explored memory elements based on phase separated blends of ferroelectric and semiconducting materials. The demonstrated multi-functionality of a single material is a promising concept towards possible application in low-cost, large-area, non-volatile organic memories. However, the current need for elevated operation temperatures and the associated short retention times will require further attention. The good processability and tunability by chemical design of organic semiconductors will therefore be a major asset.



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