Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
The halide perovskite (HaP) semiconductors are most commonly made by spin coating from solution. However, within this method, there are an unusually large number of parameters to which the resulting HaP films are sensitive and subsequently many variations in preparation conditions. We discuss some of these, in particular the use of the anti-solvent method whereby a non-solvent for the perovskite is added shortly after the start of the spin-coat procedure. When making all-inorganic HaPs, in particular Cs-based HaPs, there are fundamental differences in preparation conditions compared to hybrid HaPs due to both lower solublitiy of alkali metal halides in many solvents as well as the much higher boiling points (therefore lower vapor pressures at any specific temperature) of the alkali metal halides compared to the organic amine halides.We also describe a novel method for preparation of HaP films starting from a metal film (Pb or Sn) which is treated with an A cation halide (e.g. CH3NH3I. This method avoids the use of toxic/environmentally-unfriendly solvents and is potentially less susceptible to irreproducibilities.
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