Electron dynamics at the perovskite/selective contact interface: fundamental characterization studies
Juan Antonio Anta a
a Pablo de Olavide University, Sevilla, Spain, Carretera de Utrera, km. 1, Montequinto, Spain
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Oral, Juan Antonio Anta, presentation 208
Publication date: 14th June 2016

Hybrid organic-inorganic halide perovskites are very efficient photovoltaic materials that when placed in contact with appropriate electron and hole selective layers lead to record energy conversion efficiencies. In this talk the electron dynamics at these contacts is analyzed in view of experimental results extracted from time-resolved laser spectroscopy studies and small perturbation opto-electronic techniques (impedance and intensity-modulated photovoltage spectroscopies – EI and IMVS). By performing experiments at different excitation intensities the effect of bimolecular recombination can be substracted and the kinetics of injection of carriers to the selective contact be determined. Electron and hole transfer kinetic constants of the order of 0.02-0.2 ns-1 are found for a variety of contacts. Back-recombination of carriers takes place in the 1-0.01 ms scale and can be probed by EI and IMVS. The proposed procedures are illustrated by comparing the electron dynamics for planar and mesoporous TiO2 electron selective contacts, and hole selective layers spiro-OMeTAD and CuSCN. It is generally observed that faster injection kinetics to the contacts does not necessarily lead to better conversion efficiency, which is instead limited by the recombination rate. Lifetimes and recombination resistances extracted from the mid-frequency feature of the EI and IMVS spectrum decrease exponentially with voltage, but at the same value of the voltage, more efficient architectures are characterized by lower recombination rates.



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