Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
In recent years hybrid quantum dot-graphene photodetectors have been made by combining the high charge carrier mobility and two dimensionality of graphene with the high light absorption coefficient of colloidal quantum dots. In addition, charge carrier types and Fermi levels alignment can be adjusted by an externally applied electrical field similar to field effect transistors. The wavelength sensitivity of the photodetector is dependent on the bandgap of the selected quantum dot material allowing for QD-graphene hybrid photodetectors with sensitivities from UV to IR to be manufactured.[1-3] QD-graphene photodetectors are usually fabricated on top of a Si/SiO2 wafer. Graphene is transferred on top of the dielectric layer and electrically connected with gold electrodes. Colloidal quantum dots as the absorbing material are deposited on top of graphene. Under light illumination, with wavelength energies larger than the bandgap, excitons are generated. Typically one charge carrier type is transferred to the graphene, and the second type is trapped in the quantum dot, generating an additional external electrical field. Due to this so called “photogating effect” the conductance of graphene changes significantly under the incident light. When light is switched off, trapped charge carriers, depending on their lifetime (usually ms), leak out of quantum dots resulting in a neutral total charge in the QD layer. The operation speed of QD-graphene hybrid photodetectors is limited by rather slow recovering time. The efficiency of these hybrid detectors depends on various parameters, such as quality of graphene, quantum dot materials, and their ligands. Here we present the use of inorganically capped quantum dots (usually organically capped quantum dots were investigated) and commercially available graphene. Furthermore, fabrication of multiple pixel detector arrays instead of single pixels are investigated aiming towards applications such as in spectrometers.
[1] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. Pelayo Garcia de Arquer, F. Gatti, F. H. L. Koppens, Nat. Nanotechnol. 2012, 7, 363-368.
[2] L. Turyanska, O. Makarovsky, S. A. Svatek, P. H. Beton, C. J. Mellor, A. Patanè, L. Eaves, N. R. Thomas, M. W. Fay, A. J. Marsden, N. R. Wilson, Adv. Electron. Mater. 2015, 1, 1500062.
[3] W. Guo, S. Xu, Z. Wu, N. Wang, M. M. T. Loy, S. Du, Small 2013, 9, 3031-3036.