Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
The n-type semiconductor bismuth vanadate (BiVO4) has recently gained a lot of attention as photoanode material for visible-light induced water oxidation. Its absorption in the visible domain (band gap energy of 2.4 eV), its suitable band edge positions compared to the OER half reaction, its stability against photo-corrosion as well as its low cost, make BiVO4 one of the most interesting ternary oxide materials for light-induced oxygen evolution from water. One major drawback for BiVO4 is its poor bulk electronic conductivity, which however can be overcome by doping as well as by improved structural design.
In here we present a new, one-step synthesis method allowing the direct deposition of BiVO4 and Mo-doped BiVO4 thin films. Starting from suitable Bi, V and Mo precursors, thin films can be fabricated by simple solution based coating procedures. Structural (GI-XRD, EBSD, SAED) and morphologic analysis (SEM, TEM) reveal that the porous thin films crystallize in a favorable monoclinic scheelite structure in micrometer large, two-dimensional, single-crystalline porous domains. It is shown that the amount of Mo within the anode material influences the amount of free charge carriers and the size and structure of the single-crystalline domains. Photocatalytic performance concerning water oxidation reaction has been investigated electrochemically and turns out to be among the highest reported so far. Our results reveal a direct correlation between molybdenum content, film structure/morphology and photocatalytic properties in solution processed Mo-doped BiVO4 thin films.
This work was funded by the DFG (SPP1613; UniCat).
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