Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
The n-type semiconducting spinel zinc ferrite (ZnFe2O4) was used as a photoabsorber material for light-driven water-splitting. It was prepared for the first time by atomic layer deposition. Using the resulting well-defined thin films as a model system, the performance of ZnFe2O4 in photoelectrochemical water oxidation was characterized. Compared to benchmark α-Fe2O3 (hematite) films, ZnFe2O4 thin films achieve a lower photocurrent at the reversible potential. However, the oxidation onset potential of ZnFe2O4 is 200 mV more cathodic, allowing the water-splitting reaction to proceed at a lower external bias and resulting in a maximum applied-bias power efficiency (ABPE) similar to that of Fe2O3. The kinetics of the water oxidation reaction were examined by intensity-modulated photocurrent spectroscopy.[2] The data indicate a considerably higher charge transfer efficiency of ZnFe2O4 at potentials between 0.8 and 1.3 V. vs. the reversible hydrogen electrode, attributable to significantly slower surface charge recombination. Finally, nanostructured ZnFe2O4 photoanodes employing a macroporous antimony-doped tin oxide (ATO) current collector reach a 5 times higher photocurrent than the flat films.[3] The maximum ABPE of these host-guest photoanodes is similarly increased.
[1] A. G. Hufnagel et al., Adv. Funct. Mater, accepted for publication.
[2] L. Peter, J. Solid State Electrochem. 17, 315–326 (2013).
[3] K. Peters et al., Chem. Mater. 27, 1090–1099 (2015).
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