Tailoring the carrier localization regime in colloidal CuInSe2/CuInS2 core/shell nanocrystals
Celso de Mello Donega a, Angela Melcherts a, Ward van der Stam a
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Oral, Ward van der Stam, presentation 115
Publication date: 14th June 2016

Colloidal nanocrystals (NCs) of ternary semiconductors, such as CuInX2 (with X = S, Se and Te), are widely investigated as alternative for the toxic heavy-metal-based NCs (CdX and PbX), owing to the tunability of their optoelectronic properties through the visible to the near-infrared spectral window.[1] However, direct synthesis protocols for ternary NCs are limited because multiple precursor reactivities must be tuned simultaneously.[1] Cation exchange (CE) reactions have emerged as alternative for direct synthesis protocols, due to the post-synthetic control over the composition with size and shape preservation, which results in NCs otherwise not attainable.[2] In this way, we have been able to produce CuInS2 quantum dots[3] and CuInSe2/CuInS2 (CISe/CIS) dot-in-rod heterostructures,[4] using partial, self-limited In3+ for Cu+ cation exchange reactions, by taking advantage of the synthetic versatility of parent Cu2-xS and CdSe/CdS nanocrystals.  

In this work, we study for the first time the carrier localization regime in ternary CISe/CIS hetero-nanocrystals. To this end, we synthesized a series of CdSe/CdS core/shell nanocrystals with variable core diameter (ranging from 2 nm to 5 nm) and shell thickness (2 to 6 CdS monolayers overgrown on each core size). Subsequently, these heteronanocrystals were used as templates and converted to the CuIn analogues by using a sequential cation exchange protocol (Cd2+ for Cu+ followed by partial, self-limited Cu+ for In3+). In this way, we can effectively tune the band offset between the CuInSe2 and CuInS2 segments, thereby affecting the carrier localization and exciton lifetimes. We study these CISe/CIS NCs with time-resolved photoluminescence decay measurements and find that the exciton lifetime depends strongly on the size/thickness of the different segments.   

[1] J. Kolny-Olesiak, H. Weller, ACS Appl. Mater. Interfaces, 2013, 5, 12221.
[2] B. Beberwyck, Y. Surendranath, A. Alivisatos, J. Phys. Chem. C., 2013, 117, 19759.
[3] W. van der Stam et al., Chem. Mater., 2015, 27, 621.
[4] W. van der Stam et al., ACS Nano, 2015, 9, 11430.



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