Using ternary blends and doping to exert morphological and electronic control over the open-circuit voltage of bulk heterojunctions
Alberto Salleo a
a Stanford University, Stanford, CA 94305, United States
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Invited Speaker, Alberto Salleo, presentation 204
Publication date: 14th June 2016

The process of charge generation in organic photovoltaics proceeds through the formation of a charge transfer complex, where a hole on the donor molecule is found near an electron on the acceptor molecule. The energy of the charge transfer complex is strongly correlated to the open-circuit voltage of the solar cell. And yet, for all their importance, we still know little about the role of the energetic disorder of donor-acceptor interfaces on the open-circuit voltage. Ternary blends (2 donors and one acceptor or 2 acceptors and one donor) have been shown to exhibit open-circuit voltage tuning. These experiments offer insight into the role of disorder on open-circuit voltage. We will use dilute ternary blends to shed light on the effect of interfacial disorder and morphological control of the open-circuit voltage.The dilute ternary blends we will use are designed to control for morphology to extract the role of composition on the voltage. Blending regio-random and regio-regular donors on the other hand we will explore the role of the fullerene-polymer solution on voltage of the cell.

In addition to morphology effects, well-known electronic effects can be used to control the open-circuit voltage. We will show that judicious choice of dopant and dopant concentration allows to increase the quasi-fermi level splitting in P3HT:PCBM cells thereby increasing open-circuit voltage and power-conversion efficiency. The effect of doping on other systems will be discussed as well.



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