Bismuth Vanadate by Atomic Layer Deposition
Morgan Stefik a
a University of South Carolina, South Carolina, 29208
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Oral, Morgan Stefik, presentation 006
Publication date: 14th June 2016

The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4, is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained challenging. While there have been numerous demonstrations of non-conformal BiVO4 placement within conductive hosts, there remains a need for better BiVO4 fabrication techniques. Here, the atomic layer deposition of bismuth vanadates are reported from commercial reagents. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4. A selective etch process was used with vanadium-rich depositions to enable phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination and demonstrated efficient charge separation with a hole-scavenging sulfite electrolyte. The capability to deposit conformal BiVO4 will enable a new generation of nanocomposite architectures for solar water splitting.



© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info