Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Thin-Film Transistors (TFTs) based on PbS Quantum Dots active layers have been fabricated. Devices geometry was top-contact bottom-gate staggered structure, on crystalline silicon substrates with silicon dioxide dielectric. Energy levels of the QDs were modified by using different benzoic-acid ligand alternatives based on benzoic acids.
All the devices show p-type TFT characteristics, with high off-conductance indicative of a high bulk conductivity of the QD layer. Highest mobility at room temperature was in the range of 10-5 cm2/V·s.
More detailed characterization of the TFTs included the measurement of the transfer characteristics at different temperatures. Activation energy of the channel conductance as a function of the gate voltage collects valuable information about the shift of the Fermi level position inside the band gap of the QD semiconductor. In the linear regime, channel conductance increases with temperature, as it could be expected. However, in the saturated regime, unexpectedly, channel conductance decreases with temperature. This effect could be attributed to a reduced mobility which could be related to a higher scattering of charge carrier in the conductance channel.
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