Elimination of Bias-stress Effect in Ligand-free QD Field-effect Transistors

Law Matt^a

^aUC Irvine, 1120 Natural Sciences II 92697 Irvine

Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)

Santiago de Compostela, Spain, 2015 September 6th - 15th

Invited Speaker, Law Matt, presentation 055
Publication date: 8th June 2015

Colloidal quantum dot (QD) solids are the subject of active research with applications emerging in light-emitting diodes, field-effect transistors, and solar cells. In this talk, I describe the use of atomic layer deposition (ALD) infilling to engineer the surfaces and interfaces of PbSe QD films in order to produce high-performance QD field-effect transistors (FETs) that completely lack bias-stress effect (i.e., drain current transients caused by charge trapping near the dielectric/channel interface). This ALD “matrix engineering” approach includes steps designed to manage ligand concentrations, passivate surface states, and arrest ionic motion within the films, resulting in the first high-mobility (~14 cm V-1 s-1), environmentally stable, and transient-free PbX QD transistors. Two bias-stress mechanisms in QD FETs are identified and discussed. The implications of these mechanisms for the operation of QD solar cells is highlighted.

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