Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
It is known that excitons dissociated into free charge carriers can significantly contribute to the performance of devices. However, exciton dissociation efficiency is strongly determined by exciton diffusion length (LD) and D-A interfacial energy barriers, with LD being mainly determined by exciton lifetime and mobility. One method for increasing exciton lifetime is to convert singlets to triplets. Triplets have much longer lifetimes than those of singlets, partially due to the spin-forbidden character of the optical transition from the excited triplet to the ground state. If the excitons transform into a triplet state, a longer lifetime through intersystem crossing would be derived, benefitting exciton dissociation. A common approach for triplet generation is to introduce heavy metals to develop spin orbit coupling.In this work, the performance of organic photovoltaic devices was successfully improved by introducing the phosphorescent material in the bulk heterojunction (BHJ) layer. The phosphorescent materials extended the exiton lifetime in the BHJ layer and enhanced the short circuit current density of the device. However, since the phosphorescent materials usually play bad carrier transporters, the doping concentration of phosphorescent material and the morphological variation of BHJ film become very important issues in the doping process. Surface phase separation was determined by atomic force microscopy and the vertical distribution of various molecules was analyzed via secondary ion mass spectroscopy. Several annealing processes were applied to the BHJ layer doped with phosphorescent material to investigate the thermal stability of the film. The exciton lifetime in the BHJ film was characterized using femtosecond time-reserved photoluminescence.
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