Role of Transition Metal Cations (Fe3+, Co2+, Ni2+) Doping on Photovoltaic Properties of MAPbI(3-x)Clx Thin-films.
Socorro Castro-Garcia a, Juan Manuel Bermudez-Garcia a, Maria Antonia Señaris-Rodriguez a, Manuel Sanchez-Andujar a, Henry J. Snaith b, Jacob Tse-Wei Wang b
a Grupo de Química Molecular e de Materiais, Centro de Investigacións Científicas Avanzadas (CICA), Departamento de Química Fundamental, Facultade de Ciencias, Universidade da Coruña, Campus de A Coruña, 15071 A Coruña, Spain., Spain
b University of Oxford, Department of Physics, Clarendon Laboratory, UK, Parks Road, United Kingdom
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)
Santiago de Compostela, Spain, 2015 September 6th - 15th
Poster, Juan Manuel Bermudez-Garcia, 248
Publication date: 8th June 2015

Doping hybrid inorganic-organic lead halide perovskites is a critical challenge for a better understanding of these systems, in order to obtain more efficient solar cells. It is well known that doped semiconductor materials change their original electronic properties, such as band‑gap, carrier diffusion lengths, charge recombination rate, etc.

During the last years, several theoretical and experimental studies have described the effect on the photovoltaic properties of partial or complete substitutions  at different positions of the MAPbI3 compound, such as A-site substitutions (MA+ by FA+ or Cs+), B-site substitutions (Pb2+ by Sn2+, Sr2+, Cd2+, Ca2+ ) or X-site substitutions (I- by Br- or Cl-).[1-3] From all these multiple structural strategies to tuning the band-gap and electronic properties of MAPbI3, the B‑position “structural” doping by different metal cations, with Pb2+ similar size (Sn2+, Sr2+, Cd2+, Ca2+)[4] is a promising strategy which would reduce the concentration of the pollutant lead cation.  

Following with the B-site doping, in this work, we present the effect on photovoltaic properties of smaller transition metal cations (Fe3+, Co2+, Ni2+) doping in MAPbI3‑xClx thin‑films. We have been able to prepare, by a single step method, different thin-films with doped MA(Pb1‑yBy)I3‑xClx compounds (B: Fe3+, Co2+, Ni2+). The obtained thin-films were characterized by X-ray diffraction, scanning electron microscopy, static and time-resolved photoluminiscence spectroscopy, photoluminescence quantum efficiency and UV-vis absorption spectroscopy. Also, we have prepared thin-film solar cell devices and we have measured the current density-voltage curve. We have found that perovskite structure is maintained when doping, inducing only slight changes on cell parameters. Otherwise, these additions modify the film crystal growing, displaying different covertures and morphologies. We have also observed a variation in the electronic properties such as the optical band-gap and the time-resolved photoluminescence decay. The preliminary results on the current density-voltage curve show an improvement in the standard device solar efficiency for the nickel doping.

 



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