Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Tin mono-sulfide (SnS) is currently generating great interest in materials science as it bears a huge potential for sustainable, low-cost and large-scale solar energy conversion. SnS is a non-toxic material consisting of abundant and cheap elements and possesses a high absorption coefficient and a band gap of 1.3 eV, which is beneficial for its application in solar cells. To date, the material is not yet explored in detail and there is only a limited number of studies reporting on SnS-based solar cells. The highest power conversion efficiency (4.4%) reported for solar cells using SnS as absorber material is very promising and was obtained in a thin film solar cell architecture in which the SnS layer was deposited in a vacuum-based process.[1] In terms of low-cost processability using coating and printing techniques, the use of solution-based fabrication methods for SnS and the deposition of SnS in combination with organic semiconductors to form hybrid solar cells is particularly interesting. In this contribution, we introduce a facile solution-based route for the preparation of nanostructured SnS layers and demonstrate their suitability for efficient charge generation in hybrid photovoltaic devices. The hybrid films are fabricated using a precursor solution containing tin(II) chloride and thioacetamide which is deposited on a substrate to form a precursor layer. The precursor film is then converted into a SnS layer by thermal annealing in inert atmosphere. SEM images of the prepared films reveal that the layers consist of a porous nanoplate network, which can be readily infiltrated with a conjugated polymer to obtain a nanostructured hybrid solar absorber material.[2] A transient absorption spectroscopic study on as prepared hybrid SnS/P3HT films revealed that long-lived charges are generated in the layers upon illumination, highlighting their potential for solar cell applications. Furthermore, hybrid solar cells were prepared in inverted device architecture and showed very promising short circuit currents up to 11-12 mA/cm². These high Iscs are based on current generation in a broad spectral range, which is due to a significant contribution of the SnS phase to charge generation in the hybrid solar cell.
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