Organic Magnetoresistance (OMAR) Studied by Impedance Spectroscopy
Tatsuhiko Ohto a, Marine Fayolle a, Mariko Yamaguchi a, Hirokazu Tada a
a Osaka University, Japan, FRC, 2-1Yamada-oka,, Suita, 565, Japan
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)
Santiago de Compostela, Spain, 2015 September 6th - 15th
Oral, Tatsuhiko Ohto, presentation 322
Publication date: 8th June 2015

Organic magnetoresistance (OMAR) has been observed for various organic semiconductors sandwiched between non-magnetic electrodes at room temperature and[MY1]  at low magnetic field (typically a few tens mT). These simple observation conditions make OMAR a promising candidate for applications such as the fabrication of magnetometers. The OMAR effect is explained by several models: a “single-carrier” model based on biporalon and “double-carrier” models based on electron-hole pairs or excitons. In most devices, severaltypes of OMAR coexist, which makes it difficult to identify the underlying mechanism. We used impedance spectroscopy to elucidate the OMAR mechanism in our devices. In the case of the poly(3-hexylthiophene-2,5-diyl) (P3HT) diode, the capacitance deduced from the impedance data indicate that the OMAR was explained by the single-carrier (bipolaron) model at lower bias voltages and[MY2]  double-carrier models at higher bias voltages[1]. Furthermore, the effect of traps caused by the roughness at the interface between the hole injection layer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate): PEDOT:PSS] and the phenyl-C61-butyric acid methyl ester (PCBM) on OMAR has been revealed from the results of impedance spectroscopy[2]. We demonstrated that the interface is important for controlling OMAR, and that the combination of OMAR measurement and impedance spectroscopy is helpful for clarifying the processes in the devices.



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