Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Within just 6 years, solar cells with perovskite structured organometallic halides as absorbers have attained more than 20% efficiency making it the fastest growing photovoltaic technology till date. The extremely high efficiency was attributed to long carrier diffusion lengths >1µm [1], quite unusual for semiconductors. A theoretical model proposed to explain this property stressed on the existence of specific charge transport pathways along ferroelectric domain boundaries of the perovskite where electrons and holes travel uninterrupted [2]. The ferroelectric domains act as miniature p-n junctions that assist the photo-generated charge carriers in travelling through the material to the opposite electrodes without recombining along the way.
We employ scanning tunneling spectroscopy (STS) to test the existence of ferroelectric domains in thin film methyl ammonium lead iodide (MAPbI3). I-V characteristics obtained from STS measurements essentially help us to differentiate electron rich (n-type) and hole rich (p-type) domains. Although the majority of data collected from thin films (<100nm) exhibited n-type behavior in par with bulk measurements [3], we find evidence for the existence of less prominent p-type regions in the same. As a next step, we will carry out Raman nanoscopy (TERS) [4], to identify the physico-chemical origin of the local p- and n- type behavior. The results will help to improve our fundamental understanding of the exceptional photovoltaic behavior of perovskite absorbers.
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