Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Developing nonvolatile memory, which works by fast and low power SET and REST switching operation, has been attracting interest as next-generation nanoelectronics devices. Resistive Random Access Memory (ReRAM) is one of the most promising nonvolatile memories due to high-density integration. The scenario of resistive switching has been considered by filament model: (1) formation of conductive filament in the resistive layer (2) control of conduction path by migration of oxygen vacancies, i.e., redox process. However, microscopic understanding of the transport mechnism of the low resistance state and redox proecess is still opened question. Furthermore, the device scale is going to sub 10 nm and theoretical undrestanding based on quantum transport theory is required.
In this presentation, we show our recent study of quantum transport processes of ultra-thin HfO2 ReRAM cell connected to TiN electrodes by first-principles calculations. To analyze the transport mechanism of low and high resistance states, we examained several models of HfOx filament structures and the oxidized interface of the resistive layer and electrodes, with/without oxygen scavenged buffer layer. We found that local concentration of oxygen vacancies provides sufficiently low resistance, and quantum point contact modulation by the redox process at the interface plays an important role to realize distinct ON/OFF current and inelastic scattering effect by electron-phonon interactions.
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