Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Hybrid organic/inorganic perovskite material, CH3NH3PbI3 (=MAPbI3) has received a great deal of attention due to their intrinsic properties such as appropriate band gap, high absorption coefficient, long hole-electron diffusion length. This feature allows for diversity in its device architecture. So far, significant progresses in solar cell performance have been established by virtue of improvement in device structures, including meso-superstructured, mesostructured, and bi-layer architecture. Lead halide perovskites solar cells exceeding 20 % in power conversion efficiency (PCE) have been fabricated with n-i-p architecture employing nanostructured (NS)-TiO2, which requires a high temperature process. However, p-i-n architecture using planar poly(3,4-ethylenedioxy-thiophene)-poly(styrenesulfonate) (PEDOT:PSS) or NiO as a p-type electrode demonstrates a relatively low performance even though this simple planar architecture has several advantages such as a low temperature process for flexible solar cell, hysteresis-less J-V curve, and absence of corrosive additives. In this work, we prepared a transparent NS-NiO on patterned glass/indium-tin-oxide (ITO) substrates with a preferred orientation by a pulsed laser deposition process (PLD). The NS NiO electrodes significantly improved the overall performance. The best-performing cell, based on NS NiO/MAPbI3/phenyl-C61-butyric acid methyl ester (PCBM), reveals a power conversion efficiency (PCE) of 17.3% with a very high fill factor of 81.3%. As a result, the (111)-oriented nanostructured NiO film plays a key role in the efficient extraction of holes and the prevention of electron leakage as a HTM in a perovskite solar cell. Our finding from this work will provide a feasible guideline for the design and a fabrication of significantly improved p-i-n perovskite solar cell system.
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