Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Over the past couple of years the field of colloidal quantum dot (CQD) photovoltaics has seen significant developments with the record power conversion efficiency (PCE) reaching 9.9% largely benefitting from novel device architectures and robust surface passivation schemes. Halide-based passivation schemes have recently been shown to effectively tune the QD carrier concentrations. In general, however, the field lacks a demonstration of doping strategies for CQD solids potentially compatible with industrial scale-up.
Herein, we demonstrate a novel post-deposition molecular doping of the CQD solid leading to efficient emptying of QD valence band tails as evidenced by a work function lowering from photoemission spectroscopy (PES). We employ an organometallic molecule with a large electron affinity (EA) lying below the electronic valence band maxima (VBM) of the QDs. The trapping electrons populating the deep gap states of the QDs are expected to transfer to the lowest unoccupied molecular orbital (LUMO) of the molecule. Our density functional theory (DFT) simulations lay a firm theoretical background for the possibility of such an electron transfer. The doping procedure leads to efficient QD solar cells with ~15% enhancement in the short-circuit current density.
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