Origin of Ferroelectric Photovoltaic Effect

Wang Junling^a

^aSchool of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue

Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)

Santiago de Compostela, Spain, 2015 September 6th - 15th

Invited Speaker, Wang Junling, presentation 103
Publication date: 8th June 2015

Ferroelectric oxides possess spontaneous polarization that can be switched by an external field. The spontaneous polarization generates an internal field that can be used to separate electron-hole pairs just like in a pn junction solar cell. Though the ferroelectric photovoltaic efficiency is generally low due to the large band gap, there are still interesting applications. We propose to use the ferroelectric photovoltaic effect as a sensing method in the ferroelectric random access memory (FeRAM). It can detect the stored information (polarization direction) nondestructively with minimal energy cost. We have conducted systematic investigations to clarify the origin of photovoltaic effect in a ferroelectric heterostructure, and proposed methods to improve the efficiency. Besides ferroelectric oxides, I will also discuss our recent work on organic ferroelectrics.

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