Requirementsfor High-voltageperovskite Solar Cells

R. Scheer^a, Ralf B. Wehrspohn^a^,^e, J. Schilling^b, D. Hesse^c, S. Ebbingshaus^d

^aMartin-Luther-University Halle-Wittenberg, Institute of Physics, Germany, Halle 06099, Germany

^bMartin-Luther-University Halle-Wittenberg, Center for Innovation Competence Sili-Nano, Halle 06099, Germany

^cMax-Planck-Institute for Microstructure Physics, Halle 06099

^dInstitute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle 06099

^eFraunhofer Institute for Mechanics of Materials IWM, Halle 06120, Germany

Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)

Santiago de Compostela, Spain, 2015 September 6th - 15th

Invited Speaker, R. Scheer, presentation 102
Publication date: 8th June 2015

Recently, the entire field of photoferroelectrics has been revitalized by reports of an abnormal photovoltaic (PV) effect in BiFeO3 (BFO) thin films. , The main characteristics of this abnormal PV effect are very large open circuit (Voc) photo voltages exceeding the band gap of the material. For instance, in high quality BFO thin films Voc is several times larger than the band gap (approx. 2.7 eV). However, reports on the photovoltaic effect in different BFO systems are rather contradictory. In a specific in-plane geometry of measuring electrodes with respect to the domain pattern, films with periodic ferroelectric/ferroelastic stripe domain patterns show Voc values above1 or below the band gap. In the normal plane-parallel capacitor geometry the measured Voc value has always been below the band gap values. , Single crystals show, or do not show, large Voc values depending on the source or perhaps the crystal growth details. , , In ceramics, the reported values of Voc have always been under the band gap. In contrast, the PV mechanism in traditional semiconductors, like silicon, is induced by fabricating a pn-junction in the material. The maximum output Voc cannot be higher than the potential developed across the SCR due to thermodynamic reasons. Nevertheless, the lack of a high Voc is largely compensated in these materials by elevating the magnitude of PV current and as a result the net power available from the solar cells can be increased. In comparison, the Voc value in ferroelectric materials due to the BPV effect is not, in principle, restricted by any limitation. However, the PV current that can be extracted from these materials is so far largely limited due to the inherent insulating nature of these materials. Evidently, based on the present state of research, the net power available from these materials is not comparable to that of semiconducting materials. However by utilizing the conditions required for the manifestation of the BPV effect, viz. the PV effect in terms of current and Voc, can be proposed to be tailored and enhanced for a variety of applications. One of the applications of this effect can be the use of the high Voc value for high-voltage photovoltaic cells, which in turn can be used for water splitting purposes.

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