Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Different strategies have been followed during the last decades for the progress of light emitting diodes (LEDs). Crystalline semiconductors used in LEDs are normally prepared by means of high temperature, high vacuum and time-consuming methodologies. These procedures lead to an increase in the final cost of devices, hence making them unsuitable for large-area displays.1 For these reasons many effort are focused on the development of new materials with excellent electro-optical properties, which require simple deposition procedures and/or mild crystal growth conditions.
Very recently, hybrid organic-inorganic halide perovskites, such as MAPbX3, have emerged as appropriate emitting materials for the development of LEDs.2 The main opto-electronic properties of MAPbX3 include high light absorption coefficient (~1.5·104 cm-1), room temperature photoluminescence on film due to the high photoluminescence quantum yield, ɸf =70% as maximum, tuneable light absorption and emission, long range electron-hole diffusion lengths and ambipolarity, being the last two the determinant ones for the use of MAPbX3 in LEDs. In this communication we report different synthetic approaches for the preparation of MAPbX3 film layers and their use as active layers in LEDs.
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