Designer Nanocrystal Electronic and Optoelectronic Materials Through Controlled Coupling and Doping
Cherie Kagan a
a University of Pennsylvania, 200 South 33rd Street, Philadelphia, 19104, United States
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2015 (NFM15)
Santiago de Compostela, Spain, 2015 September 6th - 15th
Invited Speaker, Cherie Kagan, presentation 311
Publication date: 8th June 2015

Advances in synthetic methods allow a wide range of semiconductor nanocrystals (NCs) to be tailored in size and shape and to be used as building blocks in the design of NC solids. However, the long, insulating ligands commonly employed in the synthesis of colloidal NCs inhibit strong interparticle coupling and charge transport once NCs are assembled into the solids state as NC arrays. We will describe the range of short, compact ligand chemistries we employ to exchange the long, insulating ligands used in synthesis and to increase interparticle coupling. These ligand exchange processes can have a dramatic influence on NC surface chemistry as well as NC organization in the solids, showing examples of short-range order. Synergistically, we use 1) thermal evaporation and diffusion and 2) wet-chemical methods to introduce extrinsic impurities and non-stoichiometry to passivate surface traps and dope NC solids. NC coupling and doping provide control over the density of states, the carrier statistics and the Fermi energy. We will also describe the importance of engineering device interfaces to study the fundamental physics of NC solid transport and to the design of device architectures for applications. Examples of strong coupling and doping in II-VI and IV-VI semiconductor NC solids will be given that yield high-mobility, high-conductivity NC solids. Temperature--dependent transport measurements of these materials are consistent with a transition from localized to extended-state charge transport. These high mobility n- and p-type materials are used as the semiconductors to construct large-area, flexible, field-effect transistors and integrated circuits and for solar photovoltaics.



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