Proceedings of nanoGe September Meeting 2015 (NFM15)
Publication date: 8th June 2015
Cadmium chalcogenide NPLs syntheses have recently showed great progress, leading to the fabrication of more elaborate structures such as core/shell and core/crown nanoplatelets (NPLs). However, doping in this system has proven more difficult because of relatively restrictive reaction conditions. Here we describe the synthesis of Te isovalently doped CdSe NPLs by balancing the tellurium to selenium monomer concentration in the initial nucleation stage. Te doped CdSe NPLs, in comparison to undoped CdSe NPLs, show a distinct photoluminescence (PL) red shift and prolonged radiative emission lifetimes (up to ~70nsec) associated with a tellurium deep hole trap. The density of Te dopant incorporated is manifested by the extent of red shift of the PL changing from a few nanometers up to ~90nm. It seems that in the regime of very low Te doping concentration of less than approximately 1%, where the substitutional Te atoms are “isolated”, the system behaves very much like a dilutely doped system harboring bound excitons. However, we show that upon a small increase in the Te concentration where the probability of clustering of several Te substitutional sites within the NPLs increases, the system is driven towards a regime exhibiting emission behavior characteristic of a type-II system.Single particle spectroscopy reveals that CdSe:Te NPLs show increased antibunching and decreased blinking dynamics in comparison with the undoped NPLs. Furthermore, a different PL decay dynamics is observed for the “on” and “off” states suggesting spectral switching between band edge emission and hole trap emission. The relation between the properties of dilutely doped systems in bulk, as compared with both 1D confined NPLs and 3D confined QDs will be discussed.
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