Publication date: 23rd February 2022
Over the last decades, metal halide perovskites (MHP) solar cells have become popular due to their optoelectronic properties, achieving conversion efficiencies up to 25.5% [1]. The MHP semiconductors show mixed ionic-electronic conduction [2]. Paired with their electronic photoconductivity, remarkable ionic conductivity is developed thanks to vacancy displacements. This causes hysteresis in the J−V curve [3], which is highly related to memory effects that can be exploited in new non-optoelectronic applications, such as memory storage and brain-like computation.
Complex artificial visual systems used to sense, process and storage images generating large amounts of redundant data [4]. Optoelectronic resistive random memory devices (ORRAMS) are highly demanded, multifunctional future candidates for efficient artificial vision systems [5]. MHP based memristors can act as simple as two-terminal ORRAM synaptic devices, performing the functions of first-stage image processing. Despite several studies have developed deeper knowledge about chemical mechanism enabling to emulate synaptic functions [6], some challenges are still remaining. While conductance states of MHP devices have been proven to be time and voltage modulated [7], their light-tunable synaptic characteristics have not received such attention [4].
Here, we draw on small light perturbation techniques, such as squared-pulse application or Intensity Modulated Photocurrent Intensity (IMPS), widely used in the characterization of MHP solar cells, to achieve a deeper insight of MHP memristors mechanisms governing their performance under low illumination intensities. Exploring light-potentiation and dependent frequency response will allow to mimic neural spiking networks and memory functions of the human brain.
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