DOI: https://doi.org/10.29363/nanoge.matnec.2022.020
Publication date: 23rd February 2022
Families of hybrid perovskite materials have been developed in the last 10 years for photovoltaics and unique properties have been revealed that render them suitable for memory applications. In particular, the discovery of their mixed electronic and ionic conductivity that links with the hysteresis in their electrical response allows the presence of different conductance states. The hybrid perovskites can be described as ABX3 where A = monovalent cations, B = divalent cations and X = halide anions. The versatility of the system is very high and it is possible to use combinations of cations (Methyl ammonium, Formamidinium, Cs+, guanidinium+ and Rb+) and anions (I, Br) to modify their physical and chemical properties. Particularly useful for memory applications, the interplay between electronic current and ionic displacements can be tuned with the formulation leading to a range of ion diffusion coefficients and hysteresis behaviours.1, 2 Here, we analyse the main properties of these families and we discuss the dynamic interaction of migrating ions with external interfaces in their role as memristor devices.3,4 We discuss the internal mechanism on the basis of the device configuration and the electrical response leading to volatile and non-volatile memories with different conductance states.
REFERENCES:
1. Li, C.; Guerrero, A.; Huettner, S.; Bisquert, J., Unravelling the role of vacancies in lead halide perovskite through electrical switching of photoluminescence. Nature Communications 2018, 9 (1), 5113.
2. Wang, H.; Guerrero, A.; Bou, A.; Al-Mayouf, A. M.; Bisquert, J., Kinetic and material properties of interfaces governing slow response and long timescale phenomena in perovskite solar cells. Energy Environ. Sci. 2019, 12 (7), 2054-2079.
3. Solanki, A.; Guerrero, A.; Zhang, Q.; Bisquert, J.; Sum, T. C., Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories. J. Phys. Chem. Lett. 2020, 11 (2), 463-470.
4. Gonzales, C.; Guerrero, A.; Bisquert, J., Spectral properties of the dynamic state transition in metal halide perovskite-based memristor exhibiting negative capacitance. Appl. Phys. Lett. 2021, 118 (7), 073501.
We thank the financial support by Ministerio de Ciencia y Innovación (PID2019-107348GB-100).
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