DOI: https://doi.org/10.29363/nanoge.matnec.2022.009
Publication date: 23rd February 2022
In Mott insulators electrical currents can change resistance by orders-of-magnitude due to an insulator-metal phase transition. The volatility of switching in Mott insulators can be tuned, enabling both memory devices and neuron-like functionalities. In this talk I will present our recent advances in defect- and strain- engineering of Mott insulators, with the aim of developing highly energy-efficient resistive switching devices and novel functionalities.
I will first discuss how defects induced by ion irradiation in V2O3 and VO2 nanowire devices can dramatically reduce the electric field and energy required for switching by inducing non-thermal insulator-metal transitions. I will then discuss strain engineering in V2O3 which allows to tune the trajectory of the phase transition, allowing access to hitherto inaccessible regions of the phase diagram. We first report on a thermally-induced transition into the paramagnetic insulating phase in pure V2O3 which to date has only been observed in Cr-doped V2O3 samples. This may allow devices operating above room temperature to harness this prototypical Mott transition. Next, we show how to modify the trajectory of the phase transition so that it follows the metal-insulator equilibrium line down to absolute zero using self-induced stress. These unusual states of matter hold great promise for resistive switching applications, in terms of both energy efficiency and functionality.
We acknowledge funding from: Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0019273. Binational Science Foundation - grant number: 2020-337. Israel Science Foundation - grant number: 1031/21.
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