Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
Halide perovskites are considered promising materials for resistive memories (memristors)
because of their combined electronic and ionic conductivity. 1 However, the activation
mechanism is still a topic of debate. 2,4 However, the precise mechanism by which these materials
are activated for memory applications remains a topic of ongoing research and debate. To better
understand how the metal contact influences the activation process of halide perovskite
memristors, four distinct model systems were investigated, each with a different type of metal
contact: nearly inert metals (Au and Pt), metals with low reactivity (Cu), highly reactive metals
(Ag and Al), and pre-oxidized metals like AgI. 3 Our study finds that the threshold voltage for
memory activation is closely related to the electrochemical activity of the metals. Redox and
capacitive peaks appear for reactive metals at positive potentials, leading to the formation of
charged ions that can migrate under the influence of the applied electric field. These ions
contribute to the activation process by forming conductive filaments within the material. These
filaments can form either through the direct migration of the charged metal ions themselves or
by increasing the concentration of halide vacancies that are generated as a result of the
electrochemical reactions occurring at the metal-perovskite interface. An important finding of
the study was that when silver (Ag) was used in its pre-oxidized form as silver iodide (AgI), the
memristor exhibited a very low activation threshold voltage of approximately 0.2 V. This low
voltage suggests that the activation of the memristor occurs without the need for an additional
electrochemical reaction, as is required with other metals. This indicates that AgI could be an
ideal material for use as an interfacial layer in memristor devices, especially for applications
where low-energy consumption is a critical factor. Next steps, include the use of this interfacial
layers together with lead-free perovskites.
We thank Grant PID2022-141850OB-C21 funded by MICIU/AEI /10.13039/501100011033 and
by ERDF/EU.
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