Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
Memristors constitute the cornerstone of the current research in the pursuit of neuromorphic computing. The main feature of a memristor is the possibility of modifying its conducting state thanks to a physical property that can be tunned by external stimuli. Notable memristic systems include: self-organized nanowire networks [1], membranes with multiple asymmetric nanopores [2] as well as perovskites [3] and oxide materials such as VO2 [4]. Can memristors be emulated by electric circuits with simple elements: resistance, inductance, capacitance? [5]. Currently, electric circuits utilized for emulating the properties of memristors are quite complicated [6]. Here, we analyse the role that each electric element plays for providing neuromorphic behaviours such as I-V hysteresis loops, potentiation and depression. For instance, while an inductive element produces I-V characteristic counter-clockwise loops, a capacitance element yields clockwise loops. However, neither of them passes through the zero I-V point. Therefore, it is necessary to use other components that provide a rectifying response such as a diode. Based on this analysis, a simple electric circuit that reproduce typical memristic behaviours is proposed and studied experimentally.
We thank the MENEU project (20250002) funded by the Universitat Politècnica de València.
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