Highly Efficient and Durable N-I-P-type Semitransparent Perovskite Solar Cells using PTAA as Hole Transporting Layer with a Solution-Based Buffer Layer
Motoshi Nakamura a, Ching Chang Lin a, Hiroki Sugimoto a
a PXP Corporation, Japan
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Future of Metal Halide Perovskites: Fundamental Approaches and Technological Challenges - #PerFut25
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Annalisa Bruno and Pablo P. Boix
Poster, Motoshi Nakamura, 602
Publication date: 16th December 2024

Perovskite solar cells (PSCs) have attracted considerable attention in recent years because of their potential to produce lightweight products at low cost. Another feature of PSCs is that they do not necessarily compete with existing Si or copper indium gallium selenide (CIGS) solar cells but can be combined to produce tandem solar cells (TSCs) with power conversion efficiencies (PCEs) of over 40%, which is not theoretically possible with either of them on their own. When fabricating TSCs, the metal electrodes used in PSCs must be replaced with transparent electrodes, such as indium tin oxide (ITO), which are generally deposited by sputtering; however, ion bombardment during deposition often results in a lower PCE. To solve this problem, molybdenum oxide (MoOx) deposited by thermal evaporation has been widely used as a buffer layer in N-I-P-type PSCs. MoOx is not only a technically difficult material to deposit but is also known to have a negative effect on the thermal stability of PSCs. In this study, instead of the problematic MoOx layer, a solution-based metal oxide nanoparticle that can easily be deposited using the conventional spin-coating method is introduced before sputtering the ITO electrode. With the solution-based buffer layer, the PCE of the semitransparent PSC with configuration FTO/SnO2/FAPbI3/spiro-OMeTAD/buffer/ITO improved from 13.9% to 17.4%. Interestingly, when the spiro-OMeTAD in the hole-transporting layer was replaced by PTAA, the effect of introducing a buffer layer was even greater, with a dramatic PCE improvement from 7.1% to 19.2%. The PCE of unencapsulated device with the buffer layer remained as high as 13.8% after 1-sun irradiation for 65 h at 85℃, while decreasing to less than 1% for the device without the buffer layer. 

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