Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
Indium arsenide (InAs) quantum dots (QDs) have the potential to enable restriction of hazardous substances-compliant solution-processed infrared optoelectronic devices. However, their photoluminescence efficiency with centre of emission wavelength longer than 1000 nm remains very poor. It has been shown that ZnSe can improve PLQY significantly of InAs QDs, however due to the relatively high lattice mismatch it is very difficult to synthesize large core InAs/ZnSe QDs. In this work, we present a novel synthesis approach for In(As,P)/InP core/shell QDs with tunable shell thickness, demonstrating versatility across a range of core sizes with absorbance feature between 1150 and 1500 nm. The InP shell thickness can be readily tuned between 1 to 5 monolayers of InP. The resulting In(As,P)/InP core/shell quantum dots exhibit well-defined tetrahedral structures with excellent crystallinity. Importantly, the core is only minimally strained by the shell, indicating a high degree of structural compatibility and promising stability for optoelectronic applications. Interestingly, the In(As,P)/InP core/shell quantum dots do not show enhanced photoluminescence quantum efficiency, as would be expected for a type I band alignment. The key advantage of this core/shell structure is that the surface is terminated only by InP units. Leveraging the established synthesis and surface termination techniques developed for InP QDs, the chemically distinct core/shell structure can be utilized to further enhance the optical properties of the QDs. For example, growing a very thin ZnSe outer shell resulted in an In(As,P)/InP/ZnSe core/shell/shell structure with a PLQY of 15 % with centre of emission at 1350 nm. Further development of surface termination methods could improve the material luminescence even more.
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