Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
We investigated the relation between interface composition and optoelectronic properties in InP/ZnSe core/shell quantum dots (QDs) synthesized using aminophosphine-based chemistry. To do so, we prepared InP/ZnSe QDs with four distinct core/shell interfaces using an interfacial oxidation treatment and intermediate purification of the InP core QDs as variable synthesis parameters. Elemental analysis and solid-state Nuclear Magnetic Resonance (NMR) spectroscopy revealed that the presence of indium in the reaction mixture during the growth of the ZnSe shell -- being the case if an intermediate purification is omitted -- prompts the formation of a (Zn,In)Se compound during the early stages of shell growth. By comparing the optoelectronic properties of the four samples, we demonstrate that the most significant variation occurs between samples with and without the combined effects of an oxidized interface and a (Zn,In)Se inner shell. Specifically, incorporating both interfacial treatments boosted the PLQY from 44% to 83% and, notably, decreased the average biexciton recombination rate from 26 to 12 nm-1. Although this reduction in biexciton recombination is not sufficient to achieve lasing under CW conditions, the findings underscore that interfacial engineering, as seen in CdSe/CdS QDs, can similarly be utilized to tailor the non-linear optical properties of InP-based QDs.
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