Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
Colloidal semiconductor nanocrystals, or quantum dots (QDs), are nanometer-sized crystallites with optoelectronic properties that can be tuned by their size and shape. With the continuous advancement of computational power, density functional theory (DFT) has enabled to compute the electronic structure of QDs from atomistic models. Through DFT, the band structure of these atomistic models can be visualized via “Bloch Orbital Expansion” (BOE). This involves projecting the QD orbitals onto plane waves and then backfolding them into the first Brillouin zone defined by the QD lattice. This method allows for the analysis of surface trap states – defects within the bandgap of these materials – and facilitates strategies to remove them for different QD materials.
Since the implementation of the Restriction of Hazardous Substances (RoHS), focus shifted from the toxic Cd-, Pb-, and Hg-based materials towards the III-V semiconductors. With recent advancements in the III-V field, including the colloidal synthesis of GaAs via molten salt reactions (US),1 near-unity PLQY for InP-based QDs (Belgium, Netherlands),2,3 70% PLQY for InAs-based QDs (Italy),4 and the development of new synthesis routes for InSb (France),5 worldwide research shows the need for a screening of these III-V materials. In this study, we applied the Bloch Orbital Expansion to generic quantum dot models passivated with halides for different compositions and sizes. For the same quantum dot model, the trap band width in the valence band varied with composition, e.g. 0.60 eV for InP and 0.06 eV for GaAs. The number of valence band trap states decreased significantly when the anion was changed from P to As to Sb, across all calculated sizes. A less pronounced reduction in trap states was observed when changing the cation from In to Ga. We conclude that surface states primarily originate from the unpassivated anion (-111) facets, highlighting the importance of passivating or eliminating these facets to further improve III-V quantum dot applications.