High-Performance Transistors Using Sustainable Microcrystalline Cellulose-Based Electrolytes
Maíza Ozório a, Douglas Vieira a, José Carvalho b, Diana Gaspar b, Luís Pereira b, Neri Alves a, Carlos Constantino a, Rodrigo Martins b
a São Paulo State University – UNESP, School of Science and Technology (FCT), Department of Physics, Presidente Prudente, SP, 19060-900, Brazil
b i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, Campus de Caparica, 2829-516, Caparica Portugal
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Sustainable energy materials and circularity - #SusMat
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Tim-Patrick Fellinger and Cristina Pozo-Gonzalo
Poster, Maíza Ozório, 585
Publication date: 16th December 2024

Electrolyte-gated transistors (EGTs) have gained attention due to their ease of manufacturing and potential applications as sensors and biosensors. The main advantage of using an electrolyte as the dielectric layer lies in its high capacitance, enabling transistors to operate at low voltages [1]. The choice of dielectric materials for the electrolyte is critical, as it governs ionic displacement, which in turn dominates the device's capacitance, driving voltage, and switching times. Additionally, it determines how EGTs can be integrated with other device components. Consequently, advancements in electrolyte dielectrics not only enhance EGT performance but also introduce new functionalities and expand the range of applications for these devices. A wide range of electrolytes has been investigated in the literature, including ion gels, aqueous salts, ionic liquids, polyelectrolytes, among others [2]. Particular attention has been drawn to high-performance electrolytes derived from cellulose, a renewable, abundant, biodegradable, and recyclable material [3]. This study investigates the performance of EGTs fabricated using indium tin oxide (ITO) for source and drain electrodes, zinc oxide (ZnO) as the active layer, gold (Au) as the gate electrode, and microcrystalline cellulose (MCC)-based electrolytes as the dielectric layer. ZnO shares the eco-friendly attributes of cellulose, as it is an abundant and biodegradable material that is compatible with solution processing and printing techniques. The MCC-based electrolyte was prepared using a methodology adapted from Carvalho et al [4]. Materials included MCC (Sigma-Aldrich), lithium hydroxide (LiOH), urea (Carl Roth, ≥99.5%) and ultrapure water. The ZnO active layer was deposited on ITO electrodes via spray-pyrolysis using a methanol solution of zinc acetate dihydrate. Then a small amount of MCC electrolyte was placed on the ZnO film and the Au gate electrode was extended from the electrolyte. The EGTs were characterized using a Keysight B1500A semiconductor device analyzer connected to a Cascade Microtech M150 probe station. All measurements were performed at room temperature (23°C), with ~45% relative humidity, and in the dark to prevent photoconduction effects in the ZnO film. Main parameters analyzed included threshold voltage (VTH), Ion/Ioff, and transconductance (gm). The double-sweep output curves were obtained by varying the gate potential (VGS: 0 to 1.5 V). We observe an amplification of the IDS current up to approximately 2.5 mA, with minimal counterclockwise hysteresis. The device presented a good saturation profile at low voltage. The EGTs demonstrated excellent performance as observed in transfer curves with low leakage current and remarkable stability. Measurements cycles (ten transfer curves), from the same device, presented no significant changes in profile, indicating absence of undesirable electrochemical effects. Such stability is crucial for sensor applications, where field-induced chemical interactions at semiconductor/electrolyte interface must be avoided. Transfer curves measured one week later confirmed the device's long-term stability. Calculated device metrics included an average VTH of ~0.4 ± 0.02 V, an Ion/Ioff exceeding five orders of magnitude, and gm values of ~2.0 ± 0.25 mS. The high gm underscores the device's capability for modulating small variations in VGS. These results highlight the significant potential of MCC-based electrolytes for fabricating high-performance EGTs with low-voltage operation and excellent stability, positioning these electrolytes as a promising option for the development of innovative transistors and advanced applications in printed sustainable electronics. Furthermore, the characteristics of EGTs are favorable for the development of sustainable sensors for detecting environmental contaminants. In this context, EGTs integrated with Surface-Enhanced Raman Spectroscopy (SERS) can offer enhanced accuracy for sustainable sensors, a key focus for future research stages.

The authors thank Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) (Grants 2018/22214-6, 2021/01161-4 and 2022/16125-6), Coordenação de Aperfeiçoamento de Pessoal de Nível Superior-Brasil (CAPES) - Finance Code 001, Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq - 306501/2022-8) and Instituto Nacional de Eletrônica Orgânica (INCT/INEO) for technical and financial support.

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