Operating Mechanism Principles and Advancements of Memristors Based on Halide Perovskites
So-Yeon Kim a, Heyi Zhang a b, Jenifer Rubio-Magnieto a
a Instituto de Tecnología Química (ITQ). Universitat Politècnica de València- Consejo Superior de Investigaciones Científicas (UPV-CSIC). 46022 València, Spain
b Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Advancements in Memristor Technology: From Materials to Devices and Applications - #MemTech
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Valeria Bragaglia, Wooseok Choi and Juan Bautista Roldan
Oral, So-Yeon Kim, presentation 571
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.571
Publication date: 16th December 2024

According to the advents of big data processing technologies and artificial intelligence (AI) generation, next-generation memristors have been in the spotlight as technologies to overcome the bottleneck limitations of von Neumann. Memristor (memory + resistor) is one of the key elements for high-performance integrated memory and neuromorphic computing applications with low energy consumptions and efficient processing. Among various memristor candidates, halide perovskites (HPs) have been actively studied as potential candidates for these devices due to their unique switching characteristics with low power consumption, simple fabrication, flexible integration compatibility across various sources for scalability, etc. However, there is still a lack of dynamic physical analysis and overviews about operating mechanisms and characteristics of HPs-based memristor and neuromorphic devices, which are essential for future application realization with high performance and accuracy. So here, we overview and outline the various characteristics and operating principles of the HPs-based memristors and the basic neuromorphic devices. First, briefly introduce HPs-based memristors and neuromorphic applications and discuss different switching types /operating mechanisms according to the conducting pathway occurring inside the active HP layer to figure out the beneficial types for the desired memory/neuromorphic device applications. Finally, show the analyze tools and physical dynamic models for the general insight to electrical actuation of the memory/neuromorphic systems from various perspectives.

[1] S.-Y. Kim, H. Zhang, and J. Rubio-Magnieto, "Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices," J. Phys. Chem. Lett. 2024, 15, 40, 10087–10103.

Acknowledgements:

This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 (“PeroSpiker”)

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