Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.480
Publication date: 16th December 2024
A plethora of new semiconductors have recently emerged as versatile materials for solar cells and photocatalytic applications. Combinatorial analytical probes have played a pivotal role in uncovering the mechanisms underpinning light-harvesting performance even before device optimisation has been attempted.
Ultrafast optical probes of photoconductivity dynamics are particularly useful here, uncovering the generation, localisation and ultimate recombination of charge carriers following photon absorption. We report on a peculiar ultrafast self-localisation process observed across wide classes of new bismuth-based semiconductors, including bismuth halides and chalcogenides. We have most recently shown such dynamic transitions from large to small polaronic states to dominate the dynamics of charge carriers in Cs2AgSbxBi1–xBr6 double perovskites,[1] (AgI)x(BiI3)y Rudorffites,[2] and AgBiS2 nanocrystals[3] and discuss the influence of alloying, cation disorder and stoichiometry on such charge-carrier localization events.
Probing charge-carrier motion in highly anisotropic semiconductors poses particular challenges. We show how such charge transport can be probed successfully in layered, two-dimensional (2D) metal halide perovskites that have been found to improve the stability of metal halide perovskite thin films and devices. We show that the 2D perovskites PEA2PbI4 and BA2PbI4 exhibits an excellent in-plane mobilities and exhibit unexpectedly high densities of sustained populations of free charge carriers, surpassing the Saha equation predictions even at low temperature.[4] In addition, we examine the effects of the high anisotropy of transport in thin films comprising layers that are highly oriented either parallel or perpendicular to the substrate plane.[5] We further demonstrate a powerful technique to the degree of transport anisotropy in these materials.
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Previously nanoGe Spring Meeting (NSM) and nanoGe Fall Meeting (NFM), MATSUS is a multiple symposia conference focused on a broad set of topics of advanced materials preparation, their fundamental properties, and their applications, in fields such as renewable energy, photovoltaics, lighting, semiconductor quantum dots, 2-D materials synthesis, charge carriers dynamics, microscopy and spectroscopy semiconductors fundamentals, etc.
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